sot-223 unit: mm 3.00 +0.1 -0.1 0.70 +0.1 -0.1 2.9 4.6 6.50 +0.2 -0.2 3.50 +0.2 -0.2 0.90 +0.2 -0.2 7.00 +0.3 -0.3 1 . 6 5 + 0 . 1 5 - 0 . 1 5 0 . 1 m a x 0 . 9 0 + 0 . 0 5 - 0 . 0 5 1 2 4 3 1 base 2 collecto r 3 emitter 4 collecto r FZT1151A features low s aturation volt age high gain absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-ba se voltage v cbo -45 v collector-emit ter voltage v ceo -40 v em itt er-b ase voltage v ebo -5 v continuo us collect or cur rent i c -3 a pow er dissi pation p c 2.5 w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to +150 el ectrical character istics t a = 2 5 paramet er sym bol test c onditons min typ ma x unit collector to base breakdow n voltage v cbo i c =-10 0 a -45 v collector to em itt er bre akdow n voltage v ceo i c =-10 m a -40 v em itt er to base breakdow n voltage v ebo i e =-10 0 a -5.0 v collector cut-off c urr ent i cbo v cb =- 36 v, i e = 0 -100 na em itt er cut-off curr ent i ebo v eb =-4v,i c =0 -100 na i c = -10 m a; v ce = -2 v 270 450 i c = -500ma ; v ce =- 2v 250 800 i c = -2a; v ce = -2v 180 300 i c =- 1.8a; i b = -70m a -0.26 v i c = -3a; i b = -250ma -0.3 v output capacit ance c ob v cb =-10 v, i e = 0,f =1.0m hz 40 pf transition frequency f t i c = -50 m a; v ce =-10v; f = 50 mhz 145 mh z v ce(sat) collector to em itt er saturation voltage h fe dc curre nt gain mark ing mar king 1151a sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type product specification 4008-318-123
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